PULSED LASER AND ELECTRON BEAM INDUCED DIFFUSION OF ANTIMONY IN SILICON
نویسندگان
چکیده
منابع مشابه
Pulsed Electron Beam Annealing of Arsenic-implantation Damage in Silicon
A SPIRE-300 pulsed electron beam processor has been used t o recrystallize (100) and (111) 15 Si wafers implanted with As (140 keV 10 cm-2). The machine parameters have been selected t o obtain an electron energy deposition profik convenient for melting of the silicon surface 2 down t o 1 J/cm . The best regrawth layer quality and As incorporation wereobtained with electron energy densities in ...
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ژورنال
عنوان ژورنال: Le Journal de Physique Colloques
سال: 1983
ISSN: 0449-1947
DOI: 10.1051/jphyscol:1983538